No | Part number | Description ( Function ) | Manufacturers | |
1 | ZXTP2013Z | PNP LOW SATURATION MEDIUM POWER TRANSISTOR ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3.5 amps continuous current |
Zetex Semiconductors |
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Recommended search results related to ZXTP2013Z |
Part No | Description ( Function) | Manufacturers | |
ZXTP2013G | PNP MEDIUM POWER LOW SATURATION TRANSISTOR ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for u |
Zetex Semiconductors |
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ZXTP2013G | 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features BVCEO > -100V IC = -5A High Continuous Collector Current ICM = -10A Peak Pulse Current Low Saturation Voltage VCE(SAT) < -90mV @ -1A RSAT |
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02013Rxxxx | SUrface Mount Ceramic Capacitor Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Ideal for Timed RC Circuits and Critical Tuning Applications QUICK REFERENCE DATA DESCRIPTION Rated Voltage UR (DC): NP0 Di |
Skywell Technology |
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2SA2013 | DC/DC Converter Applications Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features · Adoption of FBET |
Sanyo Semicon Device |
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2SK2013 | Silicon N Channel MOS Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.7 S (typ.) Absolute Maximum Ratings (Ta = 25 |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |