Datasheet ZXTN2011G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
2	ZXTN2011G	100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR Green ZXTN2011G 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 65mV max @ 1A  RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance  hFE Specif	Diodes
1	ZXTN2011G	100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in D	Zetex Semiconductors

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