No | Part number | Description ( Function ) | Manufacturers | |
1 | ZXMS6005SGQ | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage VDS = 60V On-State Resistance 200mΩ Nominal Load Current (VIN = 5V) 2A Clamping Energy 480mJ Description The ZXMS6005SGQ is a self protected low side MOSFET with logic level input. It integrates over-tempe |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
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ZXMS6005DT8Q | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary • Continuos Drain Source Voltage • On-State Resistance • Nominal Load Current (VIN = 5V) • Clamping Energy 60V 200mΩ 1.8A 210mJ Description The Z |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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