No | Part number | Description ( Function ) | Manufacturers | |
1 | ZXMS6004SGQTA | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage VDS= 60V On-State Resistance 500mΩ Nominal Load Current (VIN = 5V) 1.3A Clamping Energy 480mJ Description The ZXMS6004SGQ is a self protected low side MOSFET with logic level input. It integrates over-tempe |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
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ZXMS6004DT8 | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance Nominal load current (VIN = 5V) Clamping Energy 500 mΩ 1.2 A 210 mJ DESCRI |
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ZXMS6004DT8Q | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Continuous Drain Source Voltage VDS = 60V On-State Resistance 500mΩ Nominal Load Current (VIN = 5V) 1.2A Clamping Energy 210mJ Descriptio |
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