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ZXMP4A16G PDF Datasheet

The ZXMP4A16G is 40V P-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
4 ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION ZXMP4A16G Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -40V RDS(on) max 60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID TA = +25°C -6.4A -5.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-ef

Diodes
Diodes
pdf
3 ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES · ·

Zetex Semiconductors
Zetex Semiconductors
pdf
2 ZXMP4A16GTA
40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION ZXMP4A16G Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -40V RDS(on) max 60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID TA = +25°C -6.4A -5.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-ef

Diodes
Diodes
pdf
1 ZXMP4A16GTC
40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION ZXMP4A16G Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -40V RDS(on) max 60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID TA = +25°C -6.4A -5.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-ef

Diodes
Diodes
pdf

[1]    

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