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ZXMN10A08E6TA PDF Datasheet

The ZXMN10A08E6TA is 100V N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 ZXMN10A08E6TA
100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. • DC - DC c

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Recommended search results related to ZXMN10A08E6TA

Part No Description ( Function) Manufacturers PDF
ZXMN10A08E6   100V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

Zetex Semiconductors
Zetex Semiconductors
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ZXMN10A08E6   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance

Diodes
Diodes
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ZXMN10A08E6TC   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance

Diodes
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APT10086BLC   Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

APT10086BLC APT10086SLC 1000V 13A 0.860W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charg

Advanced Power Technology
Advanced Power Technology
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APT10086BVFR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10086BVFR 1000V 13A 0.860Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Advanced Power Technology
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