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Datasheet ZVP3306 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ZVP3306 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω
ZVP3306A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operatin |
 Zetex Semiconductors |
 |
| 3 | ZVP3306 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω
ZVP3306A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operatin |
Zetex Semiconductors |
|
| 2 | ZVP3306A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω
ZVP3306A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operatin |
Zetex Semiconductors |
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| 1 | ZVP3306F | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F
ZVP3306F
D S
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Cur |
Zetex Semiconductors |
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