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ZL60010 PDF Datasheet

The ZL60010 is High-performance Linear Pin. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 ZL60010
High-Performance Linear PIN

ZL60010 High-Performance Linear PIN 1300nm, 1550nm Data Sheet December 2003 Ordering Information ZL60010TBD TO-46 -40 °C to +85 °C Features • • • • • 1310-1550 nm PIN TO-46 Assembly High Linearity Low Intermodulation High Responsivity Description This Photodetector offers high linearity, low capacitance and high responsivity. It is ideal for low distortion appli

Zarlink Semiconductor
Zarlink Semiconductor
pdf

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BP60010   SAW Filter

70 MHz Bandpass SAW Filter 70 MHz Bandpass SAW Filter 40 MHz Bandwidth Electronic Characteristics Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband Variation Phase Linearity Group Delay Variation Ab

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MBR600100CT   (MBR60045CT - MBR600100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P

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MBR600100CT   (MBR60045CT - MBR600100CTR) Silicon Power Schottky Diode

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/

America Semiconductor
America Semiconductor
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MBR600100CT   Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices ha

GeneSiC
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MBR600100CTR   (MBR60045CT - MBR600100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P

Naina Semiconductor
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[1]    

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Part Number Function Manufacturers PDF
1N4007

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