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Datasheet ZC836 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | ZC836 | SOT23 SILICON VARIABLE CAPACITANCE DIODES SOT23 SILICON VARIABLE CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)
ZC830/A/B to ZC836/A/B
1
1 3 2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Curre |
 Zetex Semiconductors |
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| 4 | ZC836A | SOT23 SILICON VARIABLE CAPACITANCE DIODES SOT23 SILICON VARIABLE CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)
ZC830/A/B to ZC836/A/B
1
1 3 2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Curre |
Zetex Semiconductors |
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| 3 | ZC836ATA | SILICON 28V HYPERABRUPT VARACTOR DIODES 830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase no |
Zetex Semiconductors |
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| 2 | ZC836B | SOT23 SILICON VARIABLE CAPACITANCE DIODES SOT23 SILICON VARIABLE CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)
ZC830/A/B to ZC836/A/B
1
1 3 2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Curre |
Zetex Semiconductors |
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