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Datasheet Y100N10E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1Y100N10EMTY100N10E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This
Motorola Semiconductors
Motorola Semiconductors
data


Y10 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1Y100N10EMTY100N10E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This
Motorola Semiconductors
Motorola Semiconductors
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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