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XR3082XID-F PDF Datasheet

The XR3082XID-F is High Output 18v Tolerant Rs-485/rs-422 +5v Transceivers. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 XR3082XID-F
HIGH OUTPUT 18V TOLERANT RS-485/RS-422 +5V TRANSCEIVERS

X SERIES : EXCELLENCE & RELIABILITY XR3080-88X HIGH OUTPUT 18V TOLERANT RS-485/RS-422 +5V TRANSCEIVERS JULY 2015 REV. 1.0.2 GENERAL DESCRIPTION FEATURES The XR3080-88X family of high performance RS-485/ 422 devices are designed for improved performance in noisy industrial environments and increased tolerance to system faults. The analog bus pins can withstand direct short

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Exar
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Part No Description ( Function) Manufacturers PDF
XR3082XED-F   HIGH OUTPUT 18V TOLERANT RS-485/RS-422 +5V TRANSCEIVERS

X SERIES : EXCELLENCE & RELIABILITY XR3080-88X HIGH OUTPUT 18V TOLERANT RS-485/RS-422 +5V TRANSCEIVERS JULY 2015 REV. 1.0.2 GENERAL DESCRIPTION FEATURES The XR3080-88X family of high performance RS-485/ 422 devices are designed for improved performance in noisy industrial e

Exar
Exar
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1N3082   Diode ( Rectifier )

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2SK3082   Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2

Hitachi Semiconductor
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2SK3082L   Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2

Hitachi Semiconductor
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2SK3082S   Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2

Hitachi Semiconductor
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