No | Part number | Description ( Function ) | Manufacturers | |
2 | XP1017 | GaAs MMIC Power Amplifier 30.0-36.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 P1017 Chip Device Layout Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Br |
Mimix Broadband |
|
1 | XP1017-BD | Power Amplifier 30.0-36.0 GHz GaAs MMIC Power Amplifier January 2010 - Rev 23-Jan-10 P1017-BD Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout XP1017- |
Mimix Broadband |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |