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X2816CP-20 PDF Datasheet

The X2816CP-20 is 5 Volt/ Byte Alterable E2prom. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 X2816CP-20
5 Volt/ Byte Alterable E2PROM

X2816C 16K X2816C 5 Volt, Byte Alterable E2PROM DESCRIPTION 2048 x 8 Bit FEATURES • • • • • • • 90ns Access Time Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms —No Overerase Problem High Performance Advanced NMOS Technology Fast

Xicor
Xicor
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Recommended search results related to X2816CP-20

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HY57V281620A   4 Banks x 2M x 16bits Synchronous DRAM

HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks

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HY57V281620ELT   128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 1.0 1.1 First Version Release 1. Corrected PIN ASSIGNMENT A12 to NC History Draft Date Dec. 2004 Jan. 2005 Remark This document is a general prod

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HY57V281620FLTP   Synchronous DRAM Memory 128Mbit (8Mx16bit)

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 ->

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HY57V281620FSTP   Synchronous DRAM Memory 128Mbit (8Mx16bit)

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 ->

Hynix Semiconductor
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HY57V281620FTP   Synchronous DRAM Memory 128Mbit (8Mx16bit)

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 ->

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[1]    

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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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