No | Part number | Description ( Function ) | Manufacturers | |
1 | X2816CJI-20 | 5 Volt/ Byte Alterable E2PROM X2816C 16K X2816C 5 Volt, Byte Alterable E2PROM DESCRIPTION 2048 x 8 Bit FEATURES • • • • • • • 90ns Access Time Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms —No Overerase Problem High Performance Advanced NMOS Technology Fast |
Xicor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to X2816CJI-20 |
Part No | Description ( Function) | Manufacturers | |
HY57V281620A | 4 Banks x 2M x 16bits Synchronous DRAM HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks |
Hynix Semiconductor |
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HY57V281620ELT | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 1.0 1.1 First Version Release 1. Corrected PIN ASSIGNMENT A12 to NC History Draft Date Dec. 2004 Jan. 2005 Remark This document is a general prod |
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HY57V281620FLTP | Synchronous DRAM Memory 128Mbit (8Mx16bit) 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 -> |
Hynix Semiconductor |
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HY57V281620FSTP | Synchronous DRAM Memory 128Mbit (8Mx16bit) 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 -> |
Hynix Semiconductor |
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HY57V281620FTP | Synchronous DRAM Memory 128Mbit (8Mx16bit) 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 -> |
Hynix Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |