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Datasheet WTC2305 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | WTC2305 | Enhancement Mode Power MOSFET WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
|
Weitron Technology |
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2 | WTC2305 | P-Channel Enhancement Mode Power MOSFET WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
|
Weitron Technology |
|
1 | WTC2305A | Enhancement Mode Power MOSFET WTC2305A
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
2
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple |
Weitron Technology |
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Número de pieza | Descripción | Fabricantes | |
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