No | Part number | Description ( Function ) | Manufacturers | |
1 | WS57C256F-35P | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 GENERAL DESCRIPTION The WS57C256F is a High Performance 32K x 8 UV Erasa |
STMicroelectronics |
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Recommended search results related to WS57C256F-35P |
Part No | Description ( Function) | Manufacturers | |
WS57C256F-35 | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC |
STMicroelectronics |
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WS57C256F-35C | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC |
STMicroelectronics |
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WS57C256F-35D | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC |
STMicroelectronics |
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WS57C256F-35J | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC |
STMicroelectronics |
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WS57C256F-35L | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC |
STMicroelectronics |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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