No | Part number | Description ( Function ) | Manufacturers | |
1 | WPMD2011 | MOSFET ( Transistor ) WPMD2011 Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) () 0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V Description The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion and power |
WillSEMI |
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