No | Part number | Description ( Function ) | Manufacturers | |
1 | WNM2046C | MOSFET ( Transistor ) WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET VDS (V) 20 Typical RDS(on) (Ω) 0.42 @ VGS =4.5V 0.58 @ VGS=2.5V 0.84 @ VGS=1.8V Descriptions The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and c |
WillSEMI |
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Part No | Description ( Function) | Manufacturers | |
WNM2046 | N-Channel MOSFET WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046 Http://www.sh-willsemi.com G S D Descriptions DFN1006-3L The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanc |
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WNM2046B | MOSFET ( Transistor ) WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046B Http://www.sh-willsemi.com G S D Descriptions DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses adv |
WillSEMI |
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2SA2046 | SILICON PNP EPITAXIAL PLANER TYPE Transistors 2SA2046 Silicon PNP epitaxial planer type Unit: mm 0.40+0.10 −0.05 3 0.65±0.15 For DC-DC converter 1.45 0.16+0.10 −0.06 • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and |
Panasonic |
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