No | Part number | Description ( Function ) | Manufacturers | |
3 | WFW18N50 | Silicon N-Channel MOSFET WFW18N50 Silicon N-Channel MOSFET Features 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technolog |
WINSEMI SEMICONDUCTOR |
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2 | WFW18N50N | Silicon N-Channel MOSFET Datasheet pdf - http:// / WFW18N50N Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stri |
Winsemi |
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1 | WFW18N50W | Silicon N-Channel MOSFET Datasheet pdf - http:// / WFW18N50W Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stri |
Winsemi |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |