WFP75N75 PDF Datasheet

Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology h

a FEATURES Fast Conversion Time: 5 ␮s On-Chip Track/Hold Low Total Unadjusted Error: 1 LSB Full Power Signal Bandwidth: 50 kHz Single +5 V Supply 100 ns Data Access Time Low Power (15 mW typ) Low Cost Standard 18-Lead DlPs or 20-Terminal Surface Mount Packages LC2MOS 5 ␮s 8-

Model B0922J7575A50HF Rev A Ultra Low Profile 0805 Balun 75Ω to 75Ω Balanced Description The B0922J7575A50HF is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output locations on modern chipsets in an easy to use

Model B0922N7575AHF Rev A Ultra Low Profile 0404 Balun 75Ω to 75Ω Balanced Description The B0922N7575AHF is a low profile, low impedance 1mm square subminiature wideband unbalanced to balanced transformer designed for differential inputs and output locations on modern chipse

BUK7575-100A N-channel TrenchMOS standard level FET Rev. 02 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has be

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resista