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Datasheet WFP50N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | WFP50N06 | Silicon N-Channel MOSFET Features
■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
WFP50N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's trench Layout - |
 Winsemi |
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| 1 | WFP50N06 | N-Channel MOSFET
Wisdom Semiconductor
WFP50N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.022 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)
Symbol
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2. Drain
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