|
|
Datasheet WFP13N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WFP13N50 | Silicon N-Channel MOSFET Features
� 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP13N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s tre |  Winsemi | mosfet |
| 2 | WFP13N50C | Silicon N-Channel MOSFET WFP13N50C Product Description
Silicon N-Channel MOSFET
Features
� 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced u | Winsemi | mosfet |
WFP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFP10N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFP10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100%  Wisdom technologies mosfet | | |
| 2 | WFP10N60 | Silicon N-Channel MOSFET www.DataSheet.in
P10N60 WF WFP
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Powe  WINSEMI SEMICONDUCTOR mosfet | | |
| 3 | WFP10N65 | Silicon N-Channel MOSFET www.DataSheet.in
P10N6 5 WF WFP 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This WINSEMI SEMICONDUCTOR mosfet | | |
| 4 | WFP12N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFP12N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 37nC (Typ.) □ BVDSS=600V,ID=12A □ RDS(on) :0.65 Ω (Max) @VG=10V □ 100% Wisdom technologies mosfet | | |
| 5 | WFP12N60 | Silicon N-Channel MOSFET www.DataSheet.in
P12N60 WF WFP
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced WINSEMI SEMICONDUCTOR mosfet | | |
| 6 | WFP12N65 | Silicon N-Channel MOSFET www.DataSheet.in
P12N6 5 WF WFP N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Pow e r MO SF ET is WINSEMI SEMICONDUCTOR mosfet | | |
| 7 | WFP13N50 | Silicon N-Channel MOSFET Features
� 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP13N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s tre Winsemi mosfet | |
| Esta página es del resultado de búsqueda del WFP13N50. Si pulsa el resultado de búsqueda de WFP13N50 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |