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Datasheet WFF20N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | WFF20N60 | Power MOSFET ( Transistor ) Features
� 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFF20N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanc |
 Winsemi |
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| 1 | WFF20N60S | Power MOSFET ( Transistor ) WFF20N60S
Silicon N-Channel MOSFET
Features
� Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant
General Description
Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making |
Winsemi |
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