No | Part number | Description ( Function ) | Manufacturers | |
1 | WFF12N65L | Silicon N-Channel MOSFET WFF12N65L Product Description Silicon N-Channel MOSFET Features � 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor |
Winsemi |
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Recommended search results related to WFF12N65L |
Part No | Description ( Function) | Manufacturers | |
WFF12N65 | Silicon N-Channel MOSFET www.DataSheet.in F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s |
WINSEMI SEMICONDUCTOR |
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WFF12N65S | Power MOSFET ( Transistor ) WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction |
Winsemi |
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2SA1265 | Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1265 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182 APPLICATIONS ·Power amplifier applications ·Recommen |
Inchange Semiconductor |
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2SA1265 | Power Amplifier Applications |
Toshiba |
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2SA1265 | Trans GP BJT PNP 140V 10A |
New Jersey Semiconductor |
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