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WFF12N65L PDF Datasheet

The WFF12N65L is SilICon N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 WFF12N65L
Silicon N-Channel MOSFET

WFF12N65L Product Description Silicon N-Channel MOSFET Features � 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor

Winsemi
Winsemi
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Recommended search results related to WFF12N65L

Part No Description ( Function) Manufacturers PDF
WFF12N65   Silicon N-Channel MOSFET

www.DataSheet.in F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s

WINSEMI SEMICONDUCTOR
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WFF12N65S   Power MOSFET ( Transistor )

WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction

Winsemi
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2SA1265   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1265 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182 APPLICATIONS ·Power amplifier applications ·Recommen

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2SA1265   Power Amplifier Applications

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2SA1265   Trans GP BJT PNP 140V 10A

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