No | Part number | Description ( Function ) | Manufacturers | |
2 | WFF10N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain, |
Wisdom technologies |
|
1 | WFF10N60 | Silicon N-Channel MOSFET www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This la |
WINSEMI SEMICONDUCTOR |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |