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Datasheet WFD5N50 Equivalent ( PDF )

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1 WFD5N50   Silicon N-Channel MOSFET

Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad
Winsemi
Winsemi
datasheet WFD5N50 pdf

WFD5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
WFD5N60

HIGH VOLTAGE N-Channel MOSFET

HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) :
Wisdom technologies
Wisdom technologies
datasheet pdf - Wisdom technologies
WFD5N65L

Silicon N-Channel MOSFET

WFD5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description Thi
Winsemi
Winsemi
datasheet pdf - Winsemi
WFD5N60B

Silicon N-Channel MOSFET

WFD5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power M
Winsemi
Winsemi
datasheet pdf - Winsemi


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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