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WCMC1616V9X PDF Datasheet

The WCMC1616V9X is 1mb X 16 Pseudo StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 WCMC1616V9X
1Mb x 16 Pseudo Static RAM

ADVANCE INFORMATION WCMC1616V9X Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX • Low standby power • Automatic power-down when deselected Functional Description[1] The WCMC1616V9X is a high-perf

Weida Semiconductor
Weida Semiconductor
pdf

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IBM0316169C   (IBM031xxxxC) 16Mb SDRAM

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M5M4V16169DRT-10   16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION (TOP VIEW) Vcc DQ

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M5M4V16169DRT-15   16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

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M5M4V16169DRT-7   16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION (TOP VIEW) Vcc DQ

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M5M4V16169DRT-8   16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

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[1]    

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