Datasheet W5NA90 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	W5NA90	STW5NA90 TYPE ST W5NA90 ST H5NA90F I STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS VDSS 900 V 900 V RDS(on) < 2.5 Ω < 2.5 Ω ID 5.3 A 3.5 A PRELIMINARY DATA s TYPICAL RDS(on) = 2.1 Ω s ± 30 V GATE-TO-SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s RE	STMicroelectronics

W5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
W5NB90	STW5NB90 ® STW5NB90 N - CHANNEL 900V - 2.3Ω - 5.6A - TO-247 PowerMESH™ MOSFET TYPE ST W5NB90 s s s s s V DSS 900 V R DS(on) < 2.5 Ω ID 5.6 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GAT	STMicroelectronics
W5NA100	STW5NA100 STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW5NA100 STH5NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 3.5 Ω < 3.5 Ω ID 4.6 A 2.9 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING	STMicroelectronics
W5NK100Z	STW5NK100Z STP5NK100Z - STF5NK100Z STW5NK100Z N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) 1000 V 1000 V 1000 V RDS(on) < 3.7 Ω < 3.7 Ω < 3.7 Ω ID 3 STF5NK100Z STP5NK100Z	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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