Datasheet W20NC50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	W20NC50	STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE STW20NC50 s TYPICAL s s s s STW20NC50 VDSS 500V RDS(on) < 0.27Ω ID 18.4A RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 3 DESC	STMicroelectronics

W20N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
W20NM60	STW20NM60 www.DataSheet4U.net N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh™Power MOSFET TYPE STW20NM60 n n n n n n STW20NM60 VDSS 600V RDS(on) < 0.29 Ω ID 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHA	ST Microelectronics
W20NB50	STW20NB50 TA8221AHQ / ALQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8221AHQ,TA8221ALQ 30W BTL × 2Ch Audio Power Amplifier The thermal resistance θj−T of TA8221AHQ, TA8221ALQ package designed for low thermal resistance, has a high efficiency of heat radiation. The	STMicroelectronics
W20NC50	STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE STW20NC50 s TYPICAL s s s s STW20NC50 VDSS 500V RDS(on) < 0.27Ω ID 18.4A RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MI	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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