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Datasheet W11NB80 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 W11NB80   STW11NB80

® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE
 STMicroelectronics
STMicroelectronics		 datasheet W11NB80 pdf

W11N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
W11NB80

STW11NB80

® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINS
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
W11NK100Z

STW11NK100Z

STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
W11NK90Z

STW11NK90Z

STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low
STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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