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Datasheet VTI630F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | VTI630F | N-CHANNEL MOSFET VTI630F
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features RDS(on)的典型值是 0.3Ω,低电容,开关速度快。 Typical RDS(on)=0.3Ω,low intrinsic capacitance Ciss, fast switc | BLUE ROCKET ELECTRONICS | mosfet |
VTI Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | VTI630 | N-CHANNEL MOSFET VTI630
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features RDS(on)的典型值是 0.3Ω,低电容,开关速度快。 Typical RDS(on)=0.3Ω,low intrinsic capacitance Ciss, fast switchin BLUE ROCKET ELECTRONICS mosfet | | |
2 | VTI630F | N-CHANNEL MOSFET VTI630F
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features RDS(on)的典型值是 0.3Ω,低电容,开关速度快。 Typical RDS(on)=0.3Ω,low intrinsic capacitance Ciss, fast switc BLUE ROCKET ELECTRONICS mosfet | | |
3 | VTI634 | N-CHANNEL MOSFET VTI634
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features RDS(on)的典型值是 0.38Ω,低电容,开关速度快。 Typical RDS(on)=0.38Ω,low intrinsic capacitance Ciss, fast switch BLUE ROCKET ELECTRONICS mosfet | | |
4 | VTI634F | N-CHANNEL MOSFET VTI634F
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features RDS(on)的典型值是 0.38Ω,低电容,开关速度快。 Typical RDS(on)=0.38Ω,low intrinsic capacitance Ciss, fast swi BLUE ROCKET ELECTRONICS mosfet | | |
5 | VTI640 | N-CHANNEL MOSFET VTI640
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features RDS(on)的典型值是 0.15Ω,低电容,开关速度快。 Typical RDS(on)=0.15Ω,low intrinsic capacitance Ciss, fast switch BLUE ROCKET ELECTRONICS mosfet | | |
6 | VTI640F | N-CHANNEL MOSFET VTI640F
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features RDS(on)的典型值是 0.15Ω,低电容,开关速度快。 Typical RDS(on)=0.15Ω,low intrinsic capacitance Ciss, fast swi BLUE ROCKET ELECTRONICS mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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