No | Part number | Description ( Function ) | Manufacturers | |
3 | VT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product VT3060C, VIT3060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22 |
Vishay |
|
2 | VT3060C | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VT3060C, VFT3060C, VBT3060C, VIT3060C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage dro |
Vishay |
|
1 | VT3060C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VT3060C-M3, VIT3060C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT3060C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High eff |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |