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VT1080S PDF Datasheet

The VT1080S is Trench Mos Barrier Schottky Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 VT1080S
Trench MOS Barrier Schottky Rectifier

New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101

Vishay
Vishay
pdf

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Recommended search results related to VT1080S

Part No Description ( Function) Manufacturers PDF
SVT1080XB   EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER

PSVT1080XB EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER Voltage Features 80 V Current 10 A TO-277B  Ideal for automated placement  Extreme low forward voltage drop, low power loss  High efficiency operation  Low thermal resistance  Ultra thin profile package fo

Pan Jit International
Pan Jit International
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VT1080C   Dual Trench MOS Barrier Schottky Rectifier

New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

Vishay
Vishay
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2SA1080   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applicati

Inchange Semiconductor
Inchange Semiconductor
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2SA1080   Trans GP BJT PNP 90V 0.1A 3-Pin TO-92

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New Jersey Semiconductor
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2SC1080   (2SC1079 / 2SC1080) SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN

SavantIC
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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