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VSKT56-06P PDF Datasheet

The VSKT56-06P is Add-a-pak Generation Vii Power Modules. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 VSKT56-06P
ADD-A-PAK Generation VII Power Modules

www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) or IF(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances

Vishay
Vishay
pdf

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Part No Description ( Function) Manufacturers PDF
VSKT56-06S90P   ADD-A-PAK Generation VII Power Modules

www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) or IF(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A

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1N5606   Diode 5KV 2A 2-Pin DE

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2N5606   Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

2N5606 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.

Seme LAB
Seme LAB
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2N5606   (2N5606 - 2N5612) Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and sw

SavantIC
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2SC5606   NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold ORDERIN

NEC
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[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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This is a popular adjustable voltage regulator.
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