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VSC7212RG PDF Datasheet

The VSC7212RG is Gigabit Interconnect Chip. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 VSC7212RG
Gigabit Interconnect Chip

VITESSE VITESSE SEMICONDUCTOR CORPORATION SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7212 Features • ANSI X3T11 Compliant Fibre Channel and IEEE 802.3z Compliant Gigabit Ethernet Transceiver • Over 2Gb/s Duplex Raw Data Rate • Redundant PECL Tx Outputs and Rx Inputs • 8B/10B Encoder/Decoder, Optional Encoder/ Decoder Bypass Operation • “ASIC-FriendlyTM�

ETC
ETC
pdf

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Recommended search results related to VSC7212RG

Part No Description ( Function) Manufacturers PDF
VSC7212   Gigabit Interconnect Chip

VITESSE VITESSE SEMICONDUCTOR CORPORATION SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7212 Features • ANSI X3T11 Compliant Fibre Channel and IEEE 802.3z Compliant Gigabit Ethernet Transceiver • Over 2Gb/s Duplex Raw Data Rate • Redundant PECL Tx Outputs and Rx Inp

ETC
ETC
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AMIS-721250   Image Sensor

AMIS-721250: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-721250 (PI6050D) contact image sensor (CIS) is a selectable 600 or 1200 dot per inch (dpi) resolution linear image sensor, which employs AMI Semiconductor’s proprietary CMOS image

AMI SEMICONDUCTOR
AMI SEMICONDUCTOR
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APW7212   Step-Up Converter

APW7212 1MHz, High-Efficiency, Step-Up Converter with Load Disconnection Features General Description • Wide 0.8V to V Input Voltage Range OUT • Low 1.05V (typical) Start-Up Voltage • Low 40µA No Load Bias Current • 100mA Output from a Single AA Cell Input • 2

ANPEC
ANPEC
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BUK7212-55B   TrenchMOS standard level FET

BUK7212-55B TrenchMOS™ standard level FET M3D300 Rev. 01 — 23 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technolog

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[1]    

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