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VS-GB90DA120U PDF Datasheet

The VS-GB90DA120U is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 VS-GB90DA120U
Insulated Gate Bipolar Transistor

www.vishay.com VS-GB90DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(on) typical at 75 A, 25 °C Package Circuit 1200 V 90 A at 90 °C 3.3 V SOT-227 Single switch diode FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on)

Vishay
Vishay
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