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VS-GB100TH120N PDF Datasheet

The VS-GB100TH120N is Molding Type Module Igbt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 VS-GB100TH120N
Molding Type Module IGBT

www.vishay.com VS-GB100TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Package Circuit 1200 V 100 A 1.90 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with po

Vishay
Vishay
pdf

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Recommended search results related to VS-GB100TH120N

Part No Description ( Function) Manufacturers PDF
VS-GB100TH120U   Molding Type Module IGBT

www.vishay.com VS-GB100TH120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Package Circuit 1200 V 100 A 3.10 V Double INT-A-PAK Half bridge FE

Vishay
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HRU100120    RHRU100120

RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated io

Intersil Corporation
Intersil Corporation
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R6100120   General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Powerex Power Semiconductors
Powerex Power Semiconductors
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RHRU100120   100A/ 1200V Hyperfast Diode

RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial p

Intersil Corporation
Intersil Corporation
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RURU100120   100A/ 1200V Ultrafast Diode

RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode The RURU100120 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.

Intersil Corporation
Intersil Corporation
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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LM317

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( 1.2V to 37V)

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