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Datasheet VP12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 27 | VP12 | P-Channel Enhancement-Mode Vertical DMOS Power FETs
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 Supertex Inc |
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| 26 | VP12 | P-Channel Enhancement-Mode Vertical DMOS Power FETs
www.DataSheet4U DataSheet4U.com
www.DataSheet4U DataSheet4U.com
www.DataSheet4U DataSheet4U.com
www.DataSheet4U DataSheet4U.com
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Supertex Inc |
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| 25 | VP12 | HIGH-VOLTAGE DIODES
LESHAN RADIO COMPANY, LTD.
HVM5 – HVM16 HVP5 – HVP16
HIGH – VOLTAGE DIODES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate |
 Leshan Radio Company |
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| 24 | VP12 | HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HVP5 THRU HVP16
HIGH VOLTAGE ASSEMBLIED RECTIFIER
VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes
FEATURES
* * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any Low for |
 Rectron Semiconductor |
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