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Datasheet VN2410L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VN2410L | Small Signal MOSFET VN2410L
Small Signal MOSFET
240 V, 200 mA, N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Drain −Gate Voltage
Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs)
Continuous Drain Curre |  ON Semiconductor | mosfet |
| 2 | VN2410L | TMOS FET Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2410L/D
TMOS FET Transistor
N–Channel — Enhancement
VN2410L
3 DRAIN
2 GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage – Continuous – Non– |  Motorola Inc | transistor |
| 3 | VN2410L | N-Channel 240-V (D-S) MOSFETs TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L VN2406D VN2406L VN2410L VN2410LS
V(BR)DSS Min (V)
240
rDS(on) Max (W)
10 @ VGS = 4.5 V 6 @ VGS = 10 V 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8 0.8 to 2 |  Vishay Siliconix | mosfet |
| 4 | VN2410LS | N-Channel 240-V (D-S) MOSFETs TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L VN2406D VN2406L VN2410L VN2410LS
V(BR)DSS Min (V)
240
rDS(on) Max (W)
10 @ VGS = 4.5 V 6 @ VGS = 10 V 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8 0.8 to 2 | Vishay Siliconix | mosfet |
VN2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VN2010L | N-Channel Enhancement-Mode MOS Transistors Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number VN2010L BS107
V(BR)DSS Min (V) 200
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V) 0.8 to 1.8 0.8 to 3
ID (A) 0.19 0.12
Features
Benefits
D Low OnĆResistance: 6 W D Secondary Br  TEMIC transistor | | |
| 2 | VN2010L | N-Channel 200-V (D-S) MOSFETs
VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN2010L BS107 200
V(BR)DSS Min (V)
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V)
0.8 to 1.8 0.8 to 3
ID (A)
0.19 0.12
D D D D D
Low On-Resistance: 6 W Secondary Break Vishay Siliconix mosfet | | |
| 3 | VN20AN | HIGH SIDE SMART POWER SOLID STATE RELAY VN20AN
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VN20AN
s
V DSS 60 V
R DS( on) 0.05 Ω
I OUT 33 A
VC C 36 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT FAST DEMAGNETIZATION OF I  STMicroelectronics relay | | |
| 4 | VN20AN011Y | HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics relay | | |
| 5 | VN20AN012Y | HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics relay | | |
| 6 | VN20N | HIGH SIDE SMART POWER SOLID STATE RELAY
VN20N
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VN20N
s
V DSS 60 V
R DS( on) 0.05 Ω
I OUT 33 A
VC C 26 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY L STMicroelectronics relay | | |
| 7 | VN20N011Y | HIGH SIDE SMART POWER SOLID STATE RELAY
VN20N
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VN20N
s
V DSS 60 V
R DS( on) 0.05 Ω
I OUT 33 A
VC C 26 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY L STMicroelectronics relay | |
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