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Datasheet VN2410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | VN2410 | N-Channel Enhancement-Mode Vertical DMOS FET VN2410
N-Channel Enhancement-Mode Vertical DMOS FET
Features
► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain
Appli |
 Supertex Inc |
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| 4 | VN2410L | Small Signal MOSFET VN2410L
Small Signal MOSFET
240 V, 200 mA, N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Drain −Gate Voltage
Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs)
Continuous Drain Curre |
 ON Semiconductor |
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| 3 | VN2410L | TMOS FET Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2410L/D
TMOS FET Transistor
N–Channel — Enhancement
VN2410L
3 DRAIN
2 GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage – Continuous – Non� |
 Motorola Inc |
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| 2 | VN2410L | N-Channel 240-V (D-S) MOSFETs TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L VN2406D VN2406L VN2410L VN2410LS
V(BR)DSS Min (V)
240
rDS(on) Max (W)
10 @ VGS = 4.5 V 6 @ VGS = 10 V 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8 0.8 to 2 |
 Vishay Siliconix |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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