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Datasheet VN2010L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | VN2010L | N-Channel Enhancement-Mode MOS Transistors Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number VN2010L BS107
V(BR)DSS Min (V) 200
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V) 0.8 to 1.8 0.8 to 3
ID (A) 0.19 0.12
Features
Benefits
D Low OnĆResistance: 6 W D Secondary Br |
 TEMIC |
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| 1 | VN2010L | N-Channel 200-V (D-S) MOSFETs
VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN2010L BS107 200
V(BR)DSS Min (V)
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V)
0.8 to 1.8 0.8 to 3
ID (A)
0.19 0.12
D D D D D
Low On-Resistance: 6 W Secondary Break |
 Vishay Siliconix |
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