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Datasheet VMB40-12S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VMB40-12S | NPN SILICON RF POWER TRANSISTOR VMB40-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB40-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
D
H
I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
5.0 A 36 V
DIM
#8-32 UNC-2A F E
G
M |  Advanced Semiconductor | transistor |
VMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VMB10-12F | NPN SILICON RF POWER TRANSISTOR VMB10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E I GH
2.0 A 36 Advanced Semiconductor transistor | | |
| 2 | VMB10-12S | NPN SILICON RF POWER TRANSISTOR VMB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
D
H
I J
2.0 A
#8-32 UNC-2A
G F E
36 V 1 Advanced Semiconductor transistor | | |
| 3 | VMB100-12 | NPN SILICON RF POWER TRANSISTOR VMB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB100-12 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
• • • Omnigold™ Metalization System
B G .725/18,42 F
E
K H
M L
MAXIMUM RATINGS
DIM
J
I
MINIMUM
inches / mm
MAXIMUM
inches / mm
IC VCBO Advanced Semiconductor transistor | | |
| 4 | VMB150-28 | NPN SILICON RF POWER TRANSISTOR VMB150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB150-28 is Designed for
D
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R
FEATURES:
• • • Omnigold™ Metalization System
DIM B G .725/18,42 F K H MINIMUM
inches / mm
E
M L
J
I
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCB VCE Advanced Semiconductor transistor | | |
| 5 | VMB40-12F | NPN SILICON RF POWER TRANSISTOR VMB40-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB40-12F is Designed for
B .112 x 45° A Ø.125 NOM. FULL R J .125
PACKAGE STYLE .380 4L FLG
FEATURES:
• • • Omnigold™ Metalization System
D F E
C
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 5.0 A 36 V 18 V 4.0 V Advanced Semiconductor transistor | | |
| 6 | VMB40-12S | NPN SILICON RF POWER TRANSISTOR VMB40-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB40-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
D
H
I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
5.0 A 36 V
DIM
#8-32 UNC-2A F E
G
M Advanced Semiconductor transistor | | |
| 7 | VMB70-12F | NPN SILICON RF POWER TRANSISTOR VMB70-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB70-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
• • • Omnigold™ Metalization System
C D F E I GH
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
12 A 36 V 18 V Advanced Semiconductor transistor | |
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| Número de pieza | Descripción | Fabricantes | |
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