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VHB10-28S PDF Datasheet

The VHB10-28S is NPN SilICon Rf Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 VHB10-28S
NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor
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Recommended search results related to VHB10-28S

Part No Description ( Function) Manufacturers PDF
VHB10-28F   NPN SILICON RF POWER TRANSISTOR

VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System B MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O C D

Advanced Semiconductor
Advanced Semiconductor
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27C1028   MBM27C1028

Fujitsu
Fujitsu
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2SA1028   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1028 DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) APPLICATIONS ·Designed for audio and general purpose applicati

Inchange Semiconductor
Inchange Semiconductor
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2SA1028   Trans GP BJT PNP 50V 2A 3-Pin TO-92 T/R

New Jersey Semiconductor
New Jersey Semiconductor
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2SB1028   Silicon PNP Epitaxial

2SB1028 Silicon PNP Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base volta

Hitachi Semiconductor
Hitachi Semiconductor
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