Datasheet VG36646141BT-8 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	VG36646141BT-8	CMOS Synchronous Dynamic RAM VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is package	Vanguard International Semiconductor

VG36646141B Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
VG36646141BT-8	CMOS Synchronous Dynamic RAM VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power s	Vanguard International Semiconductor
VG36646141BT-7	CMOS Synchronous Dynamic RAM VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power s	Vanguard International Semiconductor
VG36646141BT-10	CMOS Synchronous Dynamic RAM VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power s	Vanguard International Semiconductor

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