|
|
Datasheet VFT300-50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | VFT300-50 | VHF POWER MOSFET N-Channel Enhancement Mode VFT300-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-50 is Designed for AM/FM Power Amplifier Applications up to 250 MHz.
PACKAGE STYLE .400 BAL FLG(D)
.080x45° A B FULL R
D
E .1925 D C
D
(4X).060 R
M
FEATURES:
• PG = 15 dB Typ. at 300W/ 175 MHz • 5:1 Load VSWR C | Advanced Semiconductor | mosfet |
VFT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | VFT10200C | Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
FEATURES
ITO-220AB
• Trench MOS Schottky technology • Low forward voltage drop, low power losses Vishay rectifier | | |
2 | VFT10200C-E3 | Trench MOS Barrier Schottky Rectifier VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT10200C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT10200C
123
PIN 1
PIN 2
PIN 3
Vishay rectifier | | |
3 | VFT1045BP | Trench MOS Barrier Schottky Rectifier VFT1045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
TMBS ®
ITO-220AC
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operat Vishay rectifier | | |
4 | VFT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product
VFT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath t Vishay Siliconix rectifier | | |
5 | VFT1045CBP | Trench MOS Barrier Schottky Rectifier New Product
VFT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operat Vishay rectifier | | |
6 | VFT1060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
VFT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency opera Vishay rectifier | | |
7 | VFT1080C | Dual Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
VFT1080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.49 V at IF = 3 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder Vishay rectifier | |
Esta página es del resultado de búsqueda del VFT300-50. Si pulsa el resultado de búsqueda de VFT300-50 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |