No | Part number | Description ( Function ) | Manufacturers | |
2 | VFT2060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product VFT2060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant |
Vishay |
|
1 | VFT2060G | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT2060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage dro |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |