No | Part number | Description ( Function ) | Manufacturers | |
3 | VB20120S | High-Voltage Trench MOS Barrier Schottky Rectifier New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S P |
Vishay |
|
2 | VB20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20120S 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward vol |
Vishay |
|
1 | VB20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, L |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |