No | Part number | Description ( Function ) | Manufacturers | |
1 | VAO31AN22 | Diode ( Rectifier ) |
American Microsemiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to VAO31AN22 |
Part No | Description ( Function) | Manufacturers | |
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Central |
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2SC3122 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) C |
Toshiba Semiconductor |
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2SC3122 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 Fe |
Kexin |
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2SC3122 | Silicon NPN RF Transistor INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 |
Inchange Semiconductor |
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2SK3122 | Ultrahigh-Speed Switching Applications Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SK3122] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0. |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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