No | Part number | Description ( Function ) | Manufacturers | |
3 | V60D100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60D100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series SMPD K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forwar |
Vishay |
|
2 | V60D100C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM IFSM VF at IF = 30 A (TA = 125 °C) 100 V 320 A 0.66 V TJ max. |
Vishay |
|
1 | V60D100CHM3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM IFSM VF at IF = 30 A (TA = 125 °C) 100 V 320 A 0.66 V TJ max. |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |