|
|
Datasheet V60100P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V60100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.456 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
3 2 1
|
 Vishay |
 |
| 1 | V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V60100PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.47 V at IF = 10 A
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip |
Vishay |
|
| Esta página es del resultado de búsqueda del V60100P. Si pulsa el resultado de búsqueda de V60100P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |